All-silicon optical devices based on photon-emitting point defects: boosting collective effects

All-Silicon Optical Devices Based on Photon-Emitting Point Defects: Boosting Collective Effects

Réf ABG-125991
Sujet de Thèse

26/09/2024
Autre financement public

INSA de Lyon
Lieu de travail
Villeurbanne - Auvergne-Rhône-Alpes - France
Intitulé du sujet
All-Silicon Optical Devices Based on Photon-Emitting Point Defects: Boosting Collective Effects
Champs scientifiques
* Sciences de l’ingénieur
* Matériaux
* Physique
Mots clés
photonics, spectroscopy, light emitting defects, lasers


Description du sujet

Note : this PhD offer is fully funded and is certain to begin in the year 2024.


Silicon emitting centers (SECs) are local modifications of the crystalline lattice of bulk silicon, in the form of interstitial or substitutional atoms, that can emit light in or close to the near-infrared telecom wavelength bands. SECs are a novel and recent approach to integrating telecom optical sources in silicon photonics components and are beginning to gain traction at national and international levels [[i].[ii] [iii]]. While promising results have already been published, there are still many issues to be studied in detail: how to generate the desired point defects in a spatially deterministic way? How can they be best integrated into silicon photonics components? What performances should we target?

In this thesis, the recruited PhD student will work on:

* The development of innovative techniques for the creation of SEC populations by using the equipment available on the Nanolyon platform (nanofabrication equipment) or at the CLYM centre (advanced microscopy platform), or through national collaborations.
* The study of the optical properties of the generated SECs (lifetime of the excited state, quantum efficiency under optical pumping, studies as a function of the system temperature, etc.).
* Design, fabrication and characterization of photonic structures (photonic crystals, ...) that can enhance and control the direction and polarization of photons emitted by SECs coupled to optical modes.

This work will build on existing expertise in the host laboratory and on work already carried out on this theme and with various partners [[iv],[v],[vi]]. The ultimate goal of the thesis is to demonstrate the stimulated emission, or even an emission in the Superradiance regime, of a large population of SECs hosted in a photonic crystal.


The thesis is part of a project funded by the ANR (French National Research Agency), and will be hosted in the Functional Materials and Nanostructures team of the Institut des Nanotechnologies de Lyon (INL). The candidate will be enrolled at INSA Lyon, and will carry out her/his research on the university campus of La Doua (Villeurbanne), in the Irène Joliot Curie building. The supervisory team will be composed of Dr. Nicolas Chauvin (CNRS researcher, HDR) and Dr. Thomas Wood (Assistant Professor at INSA Lyon), and the work will be assisted by other permanent researchers at the INL and the technical staff of the platforms concerned.


Expected Skills

The candidate should have a strong background in physics and a strong interest in semiconductor physics, nanophotonics, nanofabrication and/or experimental studies. Experience in a clean room, as well as in optical characterization/spectroscopy will be appreciated. She/he will have to demonstrate autonomy, quick assimilation and be capable of multinational teamwork requiring interactions in English.

Practical information

Candidates can submit their application (CV, university grades and cover letter) as soon as possible. Candidates should apply irrespective of their gender or origins, knowing that all applications will be treated equally.


[i] « Single artificial atoms in silicon emitting at telecom wavelengths », Redjem et al, Nature Electronics, 2020, https://doi.org/10.1038/s41928-020-00499-0
[ii] « Cavity-Enhanced Single-Photon Emission from Artificial Atoms in Silicon », Wise et al, Technical Digest Series CLEO 2023, https://doi.org/10.1364/CLEO_SI.2023.SM3P.1
[iii] « All-silicon quantum light source by embedding an atomic emissive center in a nanophotonic cavity », Redjem et al, Nat Comms 14 :3321, 2023, https://doi.org/10.1038/s41467-023-38559-6
[iv] « Light Emitting Si-Based Mie Resonators: Toward a Huygens Source of Quantum Emitters », Khoury, et al., Adv. Optical Mater. 2201295 (2022), https://doi.org/10.1002/adom.202201295
[v] « Femtosecond laser induced creation of G and W-centers in silicon-on-insulator substrates », Quard, et al., preprint (2023), http://arxiv.org/abs/2304.03551
[vi] « Molecular dynamics simulation of the formation of W-centers in silicon by Ga ion irradiation”, Gennetidis et al, Phys. Rev. B 109, 075428, 2024. https://doi.org/10.1103/PhysRevB.109.075428



Prise de fonction :

02/12/2024


Nature du financement

Autre financement public


Précisions sur le financement

ANR


Présentation établissement et labo d'accueil

INSA de Lyon

The thesis is part of a project funded by the ANR (French National Research Agency), and will be hosted in the Functional Materials and Nanostructures team of the Institut des Nanotechnologies de Lyon (INL). The candidate will be enrolled at INSA Lyon, and will carry out her/his research on the university campus of La Doua (Villeurbanne), in the Irène Joliot Curie building. The supervisory team will be composed of Dr. Nicolas Chauvin (CNRS researcher, HDR) and Dr. Thomas Wood (Assistant Professor at INSA Lyon), and the work will be assisted by other permanent researchers at the INL and the technical staff of the platforms concerned.

Note : this PhD offer is fully funded and is certain to begin in the year 2024.


Profil du candidat

The candidate should have a strong background in physics and a strong interest in semiconductor physics, nanophotonics, nanofabrication and/or experimental studies. Experience in a clean room, as well as in optical characterization/spectroscopy will be appreciated. She/he will have to demonstrate autonomy, quick assimilation and be capable of multinational teamwork requiring interactions in English.

Candidates should apply irrespective of their gender or origins, knowing that all applications will be treated equally.

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